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  1/10 april 2003 stP4NC60 - stP4NC60fp stb4nc60-1 n-channel 600v - 1.8 w - 4.2a to-220/to-220fp/i 2 pak powermesh?ii mosfet (*)limited only by maximum temperature allowed n typical r ds (on) = 1.8 w n extremely high dv/dt capability n 100% avalanche tested n new high voltage benchmark n gate charge minimized description the powermesh ? ii is the evolution of the first generation of mesh overlay ?. the layout re- finements introduced greatly improve the ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. applications n high current, high speed switching n swith mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drivers absolute maximum ratings (?)pulse width limited by safe operating area (1)i sd 4.2a, di/dt 300a/s, v dd v (br)dss ,t j t jmax. type v dss r ds(on) i d stP4NC60 stP4NC60fp stb4nc60-1 600v 600v 600v <2.2 w <2.2 w <2.2 w 4.2a 4.2a 4.2a symbol parameter value unit stp(b)4nc60(-1) stP4NC60fp v ds drain-source voltage (v gs =0) 600 v v dgr drain-gate voltage (r gs =20k w ) 600 v v gs gate- source voltage 30 v i d drain current (continuos) at t c = 25c 4.2 4.2(*) a i d drain current (continuos) at t c = 100c 2.6 2.6(*) a i dm (  ) drain current (pulsed) 16.8 16.8(*) a p tot total dissipation at t c = 25c 100 35 w derating factor 0.8 0.28 w/c dv/dt(1) peak diode recovery voltage slope 3.5 3.5 v/ns v iso insulation withstand voltage (dc) - 2500 v t stg storage temperature C65to150 c t j max. operating junction temperature internal schematic diagram to-220 1 2 3 to-220fp 1 2 3 i 2 pak (tabless to-220)
stP4NC60/fp/stb4nc60-1 2/10 thermal data avalanche characteristics electrical characteristics (tcase = 25 c unless otherwise specified) off on (1) dynamic to-220/i 2 pa k to-220fp rthj-case thermal resistance junction-case max 1.25 3.57 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 4.2 a e as single pulse avalanche energy (starting t j = 25 c, i d =i ar ,v dd =50v) 250 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 50 a i gss gate-body leakage current (v ds =0) v gs = 30v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250a 234v r ds(on) static drain-source on resistance v gs =10v,i d =1.5 a 1.8 2.2 w symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d =2a 3.7 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 475 pf c oss output capacitance 72 pf c rss reverse transfer capacitance 10 pf
3/10 stP4NC60/fp/stb4nc60-1 electrical characteristics (continued) switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =300v,i d =2a r g = 4.7 w v gs =10v (see test circuit, figure 3) 14 ns t r rise time 14 ns q g total gate charge v dd =480v,i d = 4a, v gs =10v 16.5 23.1 nc q gs gate-source charge 2.5 nc q gd gate-drain charge 9 nc symbol parameter test conditions min. typ. max. unit t r(voff) off-voltage rise time v dd = 480v, i d =4a, r g =4.7 w, v gs = 10v (see test circuit, figure 5) 15 ns t f fall time 19 ns t c cross-over time 24 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 4.2 a i sdm (2) source-drain current (pulsed) 16.8 a v sd (1) forward on voltage i sd = 4.2a, v gs =0 1.6 v t rr reverse recovery time i sd = 4a, di/dt = 100a/s, v dd =100v,t j =150c (see test circuit, figure 5) 600 ns q rr reverse recovery charge 2.7 c i rrm reverse recovery current 9 a safe operating area for to-220fp safe operating area for to-220 / i 2 pak
stP4NC60/fp/stb4nc60-1 4/10 static drain-source on resistance transconductance thermal impedance for to-220 / i2pak output characteristics thermal impedance for to-220fp transfer characteristics
5/10 stP4NC60/fp/stb4nc60-1 source-drain diode forward characteristics capacitance variations gate charge vs gate-source voltage normalized gate thereshold voltage vs temp. normalized on resistance vs temperature
stP4NC60/fp/stb4nc60-1 6/10 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load
7/10 stP4NC60/fp/stb4nc60-1 dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 l6 a c d e d1 f g l7 l2 dia. f1 l5 l4 h2 l9 f2 g1 to-220 mechanical data p011c
stP4NC60/fp/stb4nc60-1 8/10 l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.5 0.045 0.067 f2 1.15 1.5 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
9/10 stP4NC60/fp/stb4nc60-1 dim. mm inch min. typ. max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 e 2.4 2.7 0.094 0.106 e 10 10.4 0.393 0.409 l 13.1 13.6 0.515 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.4 0.050 0.055 l l1 b2 b d e a c2 c a1 l2 e p011p5/e to-262 (i 2 pak) mechanical data
stP4NC60/fp/stb4nc60-1 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com


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